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date name drawn checked approved dwg.no. fuji electric co.,ltd. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. specification device name : type name : spec. no. : date : fuji electric co.,ltd. matsumoto factory h04-004-05 2SK3451-01MR ms5f4925 ms5f4925 1/19 power mosfet mar.-10-'01 mar.-10-'01 mar.-10-2001 a
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 2 / 19 a 1.scope this specifies fuji power mosfet 2SK3451-01MR 2.construction n-channel enhancement mode power mosfet 3.applications for switching 4.outview to-220f outview see to 7/19 page 5.absolute maximum ratings at tc=25 c (unless otherwise specified) description symbol characteristics unit remarks drain-source voltage v ds 600 v continuous drain current i d 12 a pulsed drain current i dp 48 a gate-source voltage v gs 30 v maximum avalanche current i ar 12 a tch<=150 c l=3.00mh vcc=60v maximum drain-source dv/dt dv ds /dt kv/ s peak diode recovery dv/dt dv/dt kv/ s ta=25c 60 tc=25c operating and storage t ch 150 c temperature range t stg -55 to +150 c *1 i f -i d ,-di/dt=50a/ s,vcc bv dss ,tch 150 c 6.electrical characteristics at tc=25 c ( unless otherwise s p ecified ) static ratings description symbol conditions min. typ. max. unit drain-source i d =250 a breakdown voltage bv dss v gs =0v 600 - - v gate threshold i d =250 a voltage v gs (th) v ds =v gs 3.0 - 5.0 v zero gate voltage v ds =600v vgs=0v t ch =25 c- - 25 drain current i dss vds=480v v gs =0v t ch =125 c - - 250 gate-source v gs = 30v leakage current i gss v ds =0v - 10 100 na drain-source i d =6a on-state resistance r ds (on) v gs =10v - 0.50 0.65 ? w 5*1 a mj e av maximum avalanche energy 235 20 vds<=600v maximum power dissipation p d 2.1
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 3 / 19 a dynamic ratings description symbol conditions min. typ. max. unit forward i d =6a transconductance g fs v ds =25v 5.5 11 - s input capacitance ciss v ds =25v - 1600 2400 output capacitance coss v gs =0v - 160 240 reverse transfer f=1mhz 7 10.5 pf capacitance crss - td(on) v cc =300v -1827 turn-on time tr v gs =10v -1624 td(off) i d =6a -3550ns turn-off time tf r gs =10 ? -815 total gate charge q g v cc =300v -3451 gate-source charge q gs i d =12a - 12.5 19 nc gate-drain charge q gd v gs =10v - 11.5 17.5 reverse diode description symbol conditions min. typ. max. unit avalanche capability l=3.00mh tch=25 c i av see fig.1 and fig.2 12 - - a diode forward i f =12a on-voltage v sd v gs =0v t ch =25 c - 1.00 1.50 v reverse recovery i f =12a time trr v gs =0v -0.75- s reverse recovery -di/dt=100a/ s charge qrr t ch =25 c -6.5- c 7.thermal resistance description symbol min. typ. max. unit channel to case rth(ch-c) 2.08 c/w channel to ambient rth(ch-a) 58.0 c/w
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 4 / 19 a fig.1 test circuit fig.2 operating waveforms 50
d.u.t l vcc -15v 0 bv dss idp v gs i d v ds +10v l=3.00mh vcc=60v single pulse test
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 5 / 19 a 8.reliability test items all guaranteed values are under the categories of reliab ility per non-assembled(only mosfets). each categories under the guaranteed reliab ility conform to eiaj ed 4701 b101a standards. test items required without fail : test method b-121,b-122,b-123,b-131,b-141 humidification treatment (852c,655%rh,16824hr) heat treatment of soldering (solder dipping,2605c(265cmax.),101sec,2 times) test test testing methods and conditions reference sampling acceptance no. items standard number number eiaj ed4701 1 terminal pull force strength to-220,to-220f : 10n (tensile) to-3p,to-3pf,to-247 : 25n a-111a 15 to-3pl : 45n method 1 t-pack,k-pack : 10n force maintaining duration :305sec 2 terminal load force strength to-220,to-220f : 5n (bending) to-3p,to-3pf,to-247 : 10n a-111a 15 to-3pl : 15n method 3 t-pack,k-pack : 5n number of times :2times(90deg./time) 3 mounting screwing torque value: (m3) (0:1) strength to-220,to-220f : 4010n a-112 15 to-3p,to-3pf,to-247 : 5010n method 2 to-3pl : 7010n 4 vibration frequency : 100hz to 2khz acceleration : 100m/s 2 a-121 15 sweeping time : 20min./1 cycle test code c 6times for each x,y&z directions. 5 shock peak amplitude: 15km/s 2 a-122 duration time : 0.5ms test code d 15 3times for each x,y&z directions. 6 solderability solder temp. : 235 5 c immersion time : 5 0.5sec a-131a each terminal shall be immersed in test code a 15 the solder bath within 1 to 1.5mm from the body. 7 resistance to solder temp. : 260 5 c soldering heat immersion time : 10 1sec a-132 15 number of times : 2times mechanical test methods
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 6 / 19 a failure criteria symbols unit lower limit upper limit breakdown voltage bvdss lsl * 0.8 ----- v zero gate voltage drain-source current idss ----- usl * 2 a gate-source leakage current igss ----- usl * 2 a gate threshold voltage vgs(th) lsl * 0.8 usl * 1.2 v drain-source on-state resistance rds(on) ----- usl * 1.2 ? forward transconductance gfs lsl * 0.8 ----- s diode forward on-voltage vsd ----- usl * 1.2 v marking soldering ----- with eyes or microscope ----- and other damages * lsl : lower specification limit * usl : upper specification limit * before any of electrical characteristics measure, all testing related to the humidity have conducted after drying the package surface for more than an hour at 150c. item failure criteria electrical characteristics outview test test testing methods and conditions reference sampling acceptance no. items standard number number eiaj ed4701 1 high temp. temperature : 150+0/-5c b-111a 22 storage test duration : 1000hr 2 low temp. temperature : -55+5/-0c b-112a 22 storage test duration : 1000hr 3 temperature temperature : 852c b-121a humidity relative humidity : 855% test code c 22 storage test duration : 1000hr 4 temperature temperature : 852c humidity relative humidity : 855% b-122a 22 bias bias voltage : v ds (max) * 0.8 test code c test duration : 1000hr 5 unsaturated temperature : 1302c (0:1) pressurized relative humidity : 855% b-123a 22 vapor vapor pressure : 230kpa test code c test duration : 96hr 6 temperature high temp.side : 150 5 c cycle low temp.side : -55 5 c b-131a 22 duration time : ht 30min,lt 30min test code a number of cycles : 100cycles 7 thermal shock fluid : pure water(running water) high temp.side : 100+0/-5 c b-141a 22 low temp.side : 0+5/-0 c test code a duration time : ht 5min,lt 5min number of cycles : 100cycles 1 intermittent ta=25 5 c operating ? tc=90degree d-322 22 life tch tch(max.) test duration : 3000 cycle 2 htrb temperature : 150+0/-5c (gate-source) bias voltage : v gs (max) d-323 22 (0:1) test duration : 1000hr 3 htrb temperature : 150+0/-5c (drain-source) bias voltage : v ds (max)*0.8 d-323 22 test duration : 1000hr climatic test methods test for fet
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 7 / 19 a
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 8 / 19 a 9 warning 9.1. although fuji electric is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. it is recommended to make your design fail-safe, flame retardant, and free of malfunction. 9.2. the products introduced in this specification are intended for use in the following electronic and electrical equipment witch has normal reliability requirements. ? computers oa equipments ? communications equipment (terminal devices) ? measurement equipments ? machine tools ? av equipments ? electrical home appliances ? personal equipments ? industrial robots etc? 9.3. if you need to use a product in this specification for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact fuji electric to obtain prior approval. when using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a fuji?s product incorporated in the equipment becomes faulty. ? transportation equipment (automotives, locomotives and ships etc?) ? backbone network equipment ? traffic-signal control equipment ? gas alarm, leakage gas auto breaker ? burglar alarm, fire alarm, emergency equipments etc? 9.4. don?t use products in this specification for the equipment requiring strict reliab ility such as (without limitation) ? aerospace equipment ? aeronautic equipment ? nuclear control equipment ? medical equipment ? submarine repeater equipment 10. general notice 10.1. preventing esd damage although the gate oxide of fuji power mosfets is much higher ruggedness to esd damage than small-signal mosfets and cmos ics, careful handling of any mos devices are an important consideration. 1) when handling mosfets, hold them by the case (package) and don?t touch the leads and terminals. 2) it is recommended that any handling of mosfets is done while used electrically conductive floor and tablemats that are grounded. 3) before touching a mosfets terminal, discharge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1m ? ) 4) when soldering, in order to protect the mosfets from static electricity, ground the soldering iron or soldering bath through a low impedance resistor.
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 9 / 19 a 10.2. short mode failure / open mode failure the mosfets may be in the risk of having short mode failure or open mode failure when the applied over voltage, over current or over temperature each specified maximum rating. it is recommended to use the fail-safe equipment or circuit from such possible failures. 10.3. an electric shock / a skin burn you may be in risk for an electric shock or a skin burn for directly touching to the leads or package of the mosfets while turning on electricity or operating. 10.4. smoke / fire fuji mosfets are made of incombustibility material. however, a failure of the mosfets may emit smoke or fire. also, operating the mosfets near any flammable place or material may risk the mosfets to emit smoke or fire due to the mosfets reach high temperature while operated. 10.5. corrosion / erosion avoid use or storage of the mosfets under the higher humidity, corrosive gases. it will lead the device to corrode and possibly cause the device to fail. 10.6. radiation field don?t use of the device under the radiation field since the device is not designed for radiation proofing. 11. notes for design 11.1. you must design the mosfets to be operated within specified maximum ratings (voltage, current, temperature etc?) which are imperative to prevent possible failure or destruction of the device. 11.2. we recommend to use the protection equipment or safety equipment such as fuse, breaker to prevent the fire or damage in case of unexpected accident may have occurred. 11.3. you must design the mosfets within it?s reliability and lifetime in certain the environment or condition. there is a risk that mosfets breakdown earlier than the target lifetime of the your products when mosfets was used in the reliability condition excessively. especially avoid use of the mosfets under the higher humidity, corrosive gases. 11.4. we recommend to consider for the temperature rise not only for the channel but also for the leads if it designed to large current operation to the mosfets. 11.5. we only guarantee the non-repetitive and repetitive avalanche capability and not for the continuous avalanche capability which can be assumed as abnormal condition. please note the device may be destructed from the avalanche over the specified maximum rating.
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 10 / 19 a 12. note on implementation 12.1. soldering soldering involves temperatures witch exceed the device storage temperature rating. to avoid device damage and to ensure reliab ility, the following guidelines from the quality assurance standard must be observed. 1) solder temperature and duration (through-hole package) solder temperature duration 260 5 c 10 1 seconds 350 10 c 3.5 0.5 seconds 2) the device should not be soldered closer than 1mm from the package. (* through-hole package) 3) when flow soldered, care must be taken to avoid immersing the package in the solder-bath. 12.2. please see to the following the torque reference when mounting the device to heat sink. excess torque applied to the mounting screw causes damage to the device and weak torque will increase the thermal resistance. both of these conditions may lead the device to be destructed. table 1 : recommended tightening torques. package style screw recommended tightening torques to-220 to-220f m3 30 ? 50 ncm to-3p to-3pf to-247 m3 40 ? 60 ncm to-3pl m3 60 ?80 ncm 12.3. if the heat sink with coarse finish is used, increase in thermal resistance and concentrated force to a point may cause the mosfets to be destructed. we recommend in such condition to process the surface of heat sink within 50 m and use of thermal compound to optimize its efficiency of heat radiation. moreover, it is important to evenly apply the compound and eliminate any air voids. a simple method is to apply a dot of compound of the appropriate quantity to the center of the case just below the chip mount.
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 11 / 19 a 13.notes for storage 13.1. the mosfets should be stored at a standard temperature of 5 to 35 c and humidity of 45 to 75%rh. if the storage area is very dry, a humidifier may be required. in such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. 13.2. avoid exposure to corrosive gases and dust. 13.3. rapid temperature changes may cause condensation on the mosfets surface. therefore, store the mosfets in a place with few temperature changes. 13.4. while in storage, it is important that nothing be loaded on top of the mosfets, since this may cause excessive external force on the case. 13.5. store mosfets with unprocessed lead terminals. rust may cause presoldered connections to go bad during later processing. 13.6. use only antistatic containers or shipping bag for storing mosfets. 14. additional points if you have any question about any portion in this specification, ask fuji electric or its sales agents before using the product. neither fuji nor its agents shall be liable for any injury caused bay any use of the products not in accordance with instructions set forth herein.
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 12 / 19 a 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 100ms 10ms 1ms 100 s 10 s safe operating area id=f(vds):single pulse,tc=25 c t= 1 s d.c. id [a] vds [v] ; ; 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 allowable power dissipation pd=f(tc) pd [w] tc [ c]
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 13 / 19 a 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 20v 10v 8v 7.5v 7.0v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c vgs=6.5v 012345678910 0.1 1 10 id[a] vgs[v] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 14 / 19 a 0.1 1 10 0.1 1 10 100 gfs [s] id [a] typical transconductance gfs=f(id):80 s pulse test,vds=25v,tch=25 c 0 2 4 6 8 101214161820222426 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 rds(on) [ ? ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 s pulse test,tch=25 c 10v 20v 8v 7.5v 7.0v vgs=6.5v
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 15 / 19 a -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 rds(on) [ ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=6a,vgs=10v -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. typ. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=1ma vgs(th) [v] tch [ c]
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 16 / 19 a 10 -1 10 0 10 1 10 2 10 3 1p 10p 100p 1n 10n c [f] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0 1020304050607080 0 2 4 6 8 10 12 14 16 18 20 22 24 qg [nc] typical gate charge characteristics vgs=f(qg):id=12a,tch=25 c vgs [v] 480v 300v vcc= 120v
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 17 / 19 a 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 s pulse test,tch=25 c 10 0 10 1 10 0 10 1 10 2 typical switching characteristics vs. id t=f(id):vcc=300v,vgs=10v,rg=10 ? td(on) tr tf td(off) t [ns] ?"$
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 18 / 19 a 0 25 50 75 100 125 150 0 50 100 150 200 250 300 eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starting tch):vcc=60v,i(av)<=12a 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=60v avalanche current i av [a] t av [sec]
dwg.no. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. h04-004-03 fuji electric co.,ltd. ms5f4925 19 / 19 a 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 transient thermal impedance zth(ch-c)=f(t) parameter:d=t/t zth(ch-c) [k/w] t [s] 0.5 0.2 0.02 0.05 0.1 0.01 0 ; ;

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